This is a Chemistry Department Seminar Scheduled for Thursday September 16, 2010
in the Auditorium of the Hunter Building at 4:00 pm.
The Discovery and Development of New Materials for Radiation Detection Applications
Lynn A. Boatner
Center for Radiation Detection Materials and Systems
Materials Science and Technology Division
Oak Ridge National LaboratoryOak Ridge, Tennessee 37831
Following several decades of a relatively low level of research activity, recent international events have led to a significantly increased level of interest in, and support for, research that focuses on the discovery and development of new materials for the detection of radiation. In particular, emerging applications the fields of homeland security, nuclear nonproliferation, treaty verification, and defense are placing new demands on the performance characteristics of materials and systems for both gamma ray and neutron detection. Radiation detection materials represent an extraordinarily rich cross section of materials physics that encompasses both inorganic and organic compounds, semiconductors, insulators, glasses, liquids, and gases. After a brief introduction to some of the physics of radiation detection materials, recent research at ORNL that has led to the discovery and ongoing development of new materials for radiation detection will be discussed. The topics to be considered will include new high performance halide scintillator single crystals, new rare-earth metal organic single crystals for use in both gamma ray and high-energy neutron detection, glass scintillators, and recent materials challenges associated with the current critical shortage of helium-3 for use in neutron detection.
Friday, September 10, 2010
Monday, August 2, 2010
Intel Milestone Confirms Light Beams Can Replace Electronic Signals for Future Computers
Confirming Gordon Teal's prediction as cited earlier in this blog, Intel has integrated lasers with IC's in silicon.
Intel Milestone Confirms Light Beams Can Replace Electronic Signals for Future Computers -- Intel Creates World's First End-to-End Silicon Photonics Connection with Integrated Lasers; Could Revolutionize Computer Design, Dramatically Increase Performance, Save Energy
Intel Builds Communications System With Silicon-Based Lasers.
The Wall Street Journal (7/28, Clark) says that Intel has used lasers to make a communications device and believes it is correct in predicting that the light beams will take over from electrons in pushing data in computers and networks. The company is using silicon to make the lasers, avoiding the higher costs associated with other materials and different production processes. The Journal says an announcement Tuesday by Intel that it had fashioned an end-to-end system around lasers meant that it was close to commercializing its work and effectively changing how computers are designed. Its prototype, which it calls a link, has four lasers built from silicon and can send data at speeds of 12.5 billion bits per second, the Journal says.
Intel Milestone Confirms Light Beams Can Replace Electronic Signals for Future Computers -- Intel Creates World's First End-to-End Silicon Photonics Connection with Integrated Lasers; Could Revolutionize Computer Design, Dramatically Increase Performance, Save Energy
Intel Builds Communications System With Silicon-Based Lasers.
The Wall Street Journal (7/28, Clark) says that Intel has used lasers to make a communications device and believes it is correct in predicting that the light beams will take over from electrons in pushing data in computers and networks. The company is using silicon to make the lasers, avoiding the higher costs associated with other materials and different production processes. The Journal says an announcement Tuesday by Intel that it had fashioned an end-to-end system around lasers meant that it was close to commercializing its work and effectively changing how computers are designed. Its prototype, which it calls a link, has four lasers built from silicon and can send data at speeds of 12.5 billion bits per second, the Journal says.
Saturday, June 5, 2010
The Role of Materials in the Electronics World of 2012 A.D.: An Update
To follow up on the previous reprinted post by Gordon Teal.
T. C. MCGILL, MEMBER, IEEE
Predictive Paper
In reviewing the predictions by G. K. Teal, I am struck most by the accuracy of his vision. The year 1962 was at the very beginning of the electronics revolution. At that time, Teal was Assistant Vice-President of Research and Engineering at Texas Instruments, Inc., Dallas, TX. Silicon integrated circuits were but a gleam in the eyes of a select few, yet Teal saw clearly that modern electronics would be based, fundamentally and pervasively, on “tailor-making materials starting at the atomic level.” In pointing specifically to the anticipated prominence of thin-film deposition techniques that could provide control over material constituents “in atomic amounts,” he correctly—and with enormous prescience—predicted the current dominance of deposition techniques such as molecular-beam epitaxy and chemical vapor deposition. Indeed, the highly controlled deposition of semiconductor layers that constitute the active part of advanced devices is one of the fundamental underpinnings of modern electronics and optoelectronics.
This is an excerpt from the published article: PROCEEDINGS OF THE IEEE, VOL. 87, NO. 5, MAY 1999
T. C. McGill (Member, IEEE) received the B.S. degree in mathematics
in 1963 and in electrical engineering in 1964 from Lamar State College
of Technology, Beaumont, TX, and the M.S. and Ph.D. degrees in electrical
engineering from the California Institute of Technology (Caltech),
Pasadena, in 1965 and 1969, respectively.
He is the Fletcher Jones Professor of Applied at the California Institute
of Technology. After postdoctoral study in physics at the University
of Bristol under a NATO-funded fellowship and at Princeton under an
AFNRC, he returned to Caltech’s new effort in applied physics. His
research has been aimed at the development of new devices based on
the fundamentals of solid-state physics. In over 400 refereed publications,
he has reported his work all the way from Schottky barriers to amorphous
materials, to the applications of heterojunctions and superlattices, and to
a wide class of devices. He is a member of the Defense Science Research
Council, which acts as an advisory group to the Defense Advanced
Research Projects Agency, and he continues to serve as a member of the
Steering Committee. He was a member of the Congressionally mandated
Semiconductor Technology Council and is currently a member of the
Chief of Naval Operations Executive Panel. At the end of this year he
will have directed the dissertations of over 50 Ph.D. students in electrical
engineering, physics, and applied physics.
I had hoped to review Gordon's prediction with Tom in 2012, but he passed away last year at the age of 66.
T. C. MCGILL, MEMBER, IEEE
Predictive Paper
In reviewing the predictions by G. K. Teal, I am struck most by the accuracy of his vision. The year 1962 was at the very beginning of the electronics revolution. At that time, Teal was Assistant Vice-President of Research and Engineering at Texas Instruments, Inc., Dallas, TX. Silicon integrated circuits were but a gleam in the eyes of a select few, yet Teal saw clearly that modern electronics would be based, fundamentally and pervasively, on “tailor-making materials starting at the atomic level.” In pointing specifically to the anticipated prominence of thin-film deposition techniques that could provide control over material constituents “in atomic amounts,” he correctly—and with enormous prescience—predicted the current dominance of deposition techniques such as molecular-beam epitaxy and chemical vapor deposition. Indeed, the highly controlled deposition of semiconductor layers that constitute the active part of advanced devices is one of the fundamental underpinnings of modern electronics and optoelectronics.
This is an excerpt from the published article: PROCEEDINGS OF THE IEEE, VOL. 87, NO. 5, MAY 1999
T. C. McGill (Member, IEEE) received the B.S. degree in mathematics
in 1963 and in electrical engineering in 1964 from Lamar State College
of Technology, Beaumont, TX, and the M.S. and Ph.D. degrees in electrical
engineering from the California Institute of Technology (Caltech),
Pasadena, in 1965 and 1969, respectively.
He is the Fletcher Jones Professor of Applied at the California Institute
of Technology. After postdoctoral study in physics at the University
of Bristol under a NATO-funded fellowship and at Princeton under an
AFNRC, he returned to Caltech’s new effort in applied physics. His
research has been aimed at the development of new devices based on
the fundamentals of solid-state physics. In over 400 refereed publications,
he has reported his work all the way from Schottky barriers to amorphous
materials, to the applications of heterojunctions and superlattices, and to
a wide class of devices. He is a member of the Defense Science Research
Council, which acts as an advisory group to the Defense Advanced
Research Projects Agency, and he continues to serve as a member of the
Steering Committee. He was a member of the Congressionally mandated
Semiconductor Technology Council and is currently a member of the
Chief of Naval Operations Executive Panel. At the end of this year he
will have directed the dissertations of over 50 Ph.D. students in electrical
engineering, physics, and applied physics.
I had hoped to review Gordon's prediction with Tom in 2012, but he passed away last year at the age of 66.
Monday, May 10, 2010
EFRC funding request released.
The EFRC funding was announced on February 1st, 2010 as cited here and copied below.
http://www.science.doe.gov/bes/EFRC/ANNOUNCEMENTS/DOE_announcements.html#item_100201
FY 2011 funding request released
Feb 1, 2010 :: The FY 2011 funding request for Energy Frontier Research Centers (EFRCs) is $140,000,000, which includes an increase of $40,000,000 over the FY 2010 appropriations. Continued support of $100,000,000 is provided for EFRCs, which were established to integrate the talents and expertise of leading scientists in a setting designed to accelerate research toward meeting our critical energy challenges. The EFRCs harness the most basic and advanced discovery research in a concerted effort to establish the scientific foundation for a fundamentally new U.S. energy economy. Emphasis is being placed on ensuring that the EFRCs are progressing toward their full collaborative and scientific potential. The scientific directions of the EFRCs are overseen by program staff in the Basic Energy Sciences program within the Office of Science to ensure a unified management strategy and structure.
In FY 2011, approximately $40,000,000 will also be available to fund additional EFRCs. New EFRCs will be competitively solicited in two categories: discovery and development of new materials that are critical to both science frontiers and technology innovations, and basic research for energy needs in a limited number of areas that are underrepresented in the original awards.
Discovery and development of new materials. Research in this category will focus on new synthesis capabilities, including bio-inspired approaches, to establish a strong foundation for science-driven materials discovery and synthesis in the U.S. This work will focus on materials broadly and will include crystalline materials, which have been highlighted recently as an essential component of the science grand challenges in the 2007 Basic Energy Sciences Advisory Committee report Directing Matter and Energy: Five Challenges for Science and the Imagination. As described in the November 2009 National Research Council report Frontiers in Crystalline Matter: From Discovery to Technology, the U.S., once the world leader in the discovery and growth of crystalline materials, has fallen behind other nations. Single crystals are vital in understanding the characteristics and properties of new materials, and they also have applications in devices that involve semiconductors, lasers, precision timing devices, solar cells or high temperature operations and provide a natural platform to explore novel states of matter.
Basic research for energy needs. Major areas of emphasis will be in fundamental sciences related to carbon capture and advanced nuclear energy systems. For carbon capture, focused areas include the rational design of novel materials and separation processes for post-combustion CO2 capture, as well as catalysis and separation research for novel carbon capture schemes to aid the design of future power plants. For advanced nuclear energy systems, focused areas include radiation resistant materials in fission and fusion applications and separation science and heavy element chemistry for fuel cycles. The FY 2011 DOE Budget Request also includes approximately $24,000,000 of new research funding to allow for awards to single-investigator and small-group projects in the research areas noted above. Funding Opportunity Announcements more fully describing the opportunities for both types of awards will be issued following the FY 2011 appropriation.
The “Directing Matter…” can be downloaded here:
http://www.sc.doe.gov/bes/reports/files/GC_rpt.pdf
The "Frontiers of Crystalline Matter..." is in the left column of this blog.
http://www.science.doe.gov/bes/EFRC/ANNOUNCEMENTS/DOE_announcements.html#item_100201
FY 2011 funding request released
Feb 1, 2010 :: The FY 2011 funding request for Energy Frontier Research Centers (EFRCs) is $140,000,000, which includes an increase of $40,000,000 over the FY 2010 appropriations. Continued support of $100,000,000 is provided for EFRCs, which were established to integrate the talents and expertise of leading scientists in a setting designed to accelerate research toward meeting our critical energy challenges. The EFRCs harness the most basic and advanced discovery research in a concerted effort to establish the scientific foundation for a fundamentally new U.S. energy economy. Emphasis is being placed on ensuring that the EFRCs are progressing toward their full collaborative and scientific potential. The scientific directions of the EFRCs are overseen by program staff in the Basic Energy Sciences program within the Office of Science to ensure a unified management strategy and structure.
In FY 2011, approximately $40,000,000 will also be available to fund additional EFRCs. New EFRCs will be competitively solicited in two categories: discovery and development of new materials that are critical to both science frontiers and technology innovations, and basic research for energy needs in a limited number of areas that are underrepresented in the original awards.
Discovery and development of new materials. Research in this category will focus on new synthesis capabilities, including bio-inspired approaches, to establish a strong foundation for science-driven materials discovery and synthesis in the U.S. This work will focus on materials broadly and will include crystalline materials, which have been highlighted recently as an essential component of the science grand challenges in the 2007 Basic Energy Sciences Advisory Committee report Directing Matter and Energy: Five Challenges for Science and the Imagination. As described in the November 2009 National Research Council report Frontiers in Crystalline Matter: From Discovery to Technology, the U.S., once the world leader in the discovery and growth of crystalline materials, has fallen behind other nations. Single crystals are vital in understanding the characteristics and properties of new materials, and they also have applications in devices that involve semiconductors, lasers, precision timing devices, solar cells or high temperature operations and provide a natural platform to explore novel states of matter.
Basic research for energy needs. Major areas of emphasis will be in fundamental sciences related to carbon capture and advanced nuclear energy systems. For carbon capture, focused areas include the rational design of novel materials and separation processes for post-combustion CO2 capture, as well as catalysis and separation research for novel carbon capture schemes to aid the design of future power plants. For advanced nuclear energy systems, focused areas include radiation resistant materials in fission and fusion applications and separation science and heavy element chemistry for fuel cycles. The FY 2011 DOE Budget Request also includes approximately $24,000,000 of new research funding to allow for awards to single-investigator and small-group projects in the research areas noted above. Funding Opportunity Announcements more fully describing the opportunities for both types of awards will be issued following the FY 2011 appropriation.
The “Directing Matter…” can be downloaded here:
http://www.sc.doe.gov/bes/reports/files/GC_rpt.pdf
The "Frontiers of Crystalline Matter..." is in the left column of this blog.
Friday, May 7, 2010
Widget for National Academies Press Book #12640
NAP provided the Widget software that was easily installed as a gadget on this blog.
Today I started considering the website characteristics and the system and software. Since we need databases, Google Apps does not appear to be appropriate for the crystallinematerials network requirements. MYSQL has been suggested and is available through Clemson University Information Technology a sandbox that I can play-in to get the database fields defined for both the sample suppliers and sample requesters. I also heard back from Thomas Lagrossa of the AMES Lab Materials Preparation Center. We will link to their website when we get online.
I have registered "crystallinematerials" domains for one year. (biz, ws, us, info, org, com, net).
The OBES in DOE looks like the best opportunity for funding as there may be an Energy Frontier Research Center (EFRC) funding opportunity for crystal growth soon.
Next week will be a good time to get feedback from the NRC Committee by telling them about this blog. I'll also follow up on the events of the National Academies Annual Meeting.
Today I started considering the website characteristics and the system and software. Since we need databases, Google Apps does not appear to be appropriate for the crystallinematerials network requirements. MYSQL has been suggested and is available through Clemson University Information Technology a sandbox that I can play-in to get the database fields defined for both the sample suppliers and sample requesters. I also heard back from Thomas Lagrossa of the AMES Lab Materials Preparation Center. We will link to their website when we get online.
I have registered "crystallinematerials" domains for one year. (biz, ws, us, info, org, com, net).
The OBES in DOE looks like the best opportunity for funding as there may be an Energy Frontier Research Center (EFRC) funding opportunity for crystal growth soon.
Next week will be a good time to get feedback from the NRC Committee by telling them about this blog. I'll also follow up on the events of the National Academies Annual Meeting.
Tuesday, May 4, 2010
Predictions of Gordon K. Teal in 1962
Respecting those who have gone on before and directed our steps, I am posting the predictions of Gordon Kidd Teal in 1962 for his anticipated progress in electronic crystalline materials in 2012 as published in the PROCEEDINGS OF THE IRE, May 1962, pp. 603-604.
The Role of Materials in the Electronics World of 2012 A.D.
GORDON K. TEAL - FELLOW IRE
I contend that the electronics world of 2012 A.D. could come to pass before 1972 if materials technology would permit. We can envisage clearly the contributions of electronics to the lives of our children living in 2012 A.D. They will be highly educated by electronic teaching machines; work in automated industries and offices; communicate by means of satellites instantaneously to any part of the solar system; live in homes with walls that provide cooling, heating and lighting; enjoy three-dimensional color stereophonic television and telephone; conduct all financial transactions using coded identification cards; voice opinions on national and local government policies by voting electronically from their homes; enjoy a long and healthful life through computer use which will provide diagnoses with minimum probability of error and will prescribe with maximum probability of cure; ride in quiet fuel cell powered vehicles; and have the contents of even the rarest books available within minutes at the neighborhood information service.
Once emancipated from the materials restraints, we will have developed technologies permitting tailor-making materials starting at the atomic level. Science will dominate several fields of materials which heretofore have been mainly technology. Ceramics engineering, for example, will embody the applications of advances in solid-state physics and chemistry of ceramics. Metallurgy too will continue its present strong science growth until most structural materials are designed by the scientist at his desk.
Single crystals of many exotic metals, alloys and compounds will be mass-produced. Of even more importance to the electronics industry, we will learn to deposit layers of extreme purity single or polycrystalline materials with thicknesses controlled to within a few angstroms. New thresholds of purity will be realized by the use of select enzymes to remove impurities. We shall see the use of ceramic materials as active electronic components and systems formed in integrated circuitry and operable at temperatures up to 2000°K. Insulators and conductors to meet the extremes of atmosphere and temperature for magnetohydrodynamic power generators will be a reality. Further understanding of materials and their s-rfaces will divulge the nature of catalytic phenomena. We will see semiconductors used extensively as catalysts to enhance chemical reactions. This development in the field of catalysis will promote in turn the use of fuel cells to provide power for industrial and home use, relegating to the past the power lines that mar the scenery of our cities and countryside.
Advances in cryogenics will make device operation at 4°K common. These devices, being in many forms, will operate in the superconducting state with infinitesimal power requirements and often with speeds 103 to 104 times those presently common. Cryotrons will evolve beyond the normal switching usage to become integrated logical and memory devices. The present active and passive circuit elements will be duplicated to function at near zero temperatures with attendant realization of drastically reduced noise levels and power requirements orders of magnitudes less than are presently feasible. Superconducting magnets with fields greater than 105 gauss and negligible power dissipation as well as power transformation without loss will be a reality.
During the next decade, and extending forward to the year 2012 A.D., significant advances in the area of thin films and surface phenomena will allow the materials scientist to control the bulk and surface of deposited films. Through this will evolve a new generation of transistor like devices, field emitters, and systems of integrated circuitry with high reliability and of low cost. Deposition techniques will become the dominant method for producing electronic materials as it will allow arbitrary control of the number, kind, concentration and concentration gradient of constituents. It is the nearest approach to working directly with materials in atomic amounts.
This new science of working with atoms might be aptly described as "atom engineering." It will permeate all fields of scientific endeavor and will govern the progress of the electronicist during the next 50 years. This technology will progress to the point where individual atoms, vacancies and defects will be selectively positioned in a device to function as circuit elements. Use of collective electron orbits and spins as memory storage units within a "match-box computer" will be a reality. Atom engineering will provide the solid-state analog of the vacuum tube and will also make possible elaborate tunneling devices and sophisticated systems. The advent of wafer-thin dynamic picture displays is just "around the corner," as is the all purpose ultrasensitive single crystal sensor.
I wish to point out that the specific role played by materials in the advances expected in electronics by 2012 A.D. is subtle, in fact so subtle that some may consider it to be trivial to the progress of electronics. The physics of the material is thought by some to be of singular importance. In such thought it is forgotten that the material possesses the wonderful properties we exploit, not the mathematics which describes these properties. To elucidate further, I point to the example of the p-n junction which triggered the major revolution occurring in electronics. While the elegant mathematics which describes the p-n junction is important, it is the materials technology that permits the formation of the junction which provides the many useful electronic devices we now use. Similarly, it will be our ability to understand and utilize materials, each with its own unique properties, which will be the foundation of electronics in 2012 A.D.
G. K. Teal is Assistant Vice President of Research and Engineering at Texas Instruments, Inc., Dallas, Tex. (Received December 19, 1961.)
===============================================================
Gordon Teal and John Little grew the first germanium and silicon single crystals at Bell Labs. Jack Kilby, inventor of the integrated circuit, called the process that they used to grow the bulk single crystals of germanium and silicon the "Teal Little Process" rather than the Czochralski process as many crystal growers refer to it today.
The Role of Materials in the Electronics World of 2012 A.D.
GORDON K. TEAL - FELLOW IRE
I contend that the electronics world of 2012 A.D. could come to pass before 1972 if materials technology would permit. We can envisage clearly the contributions of electronics to the lives of our children living in 2012 A.D. They will be highly educated by electronic teaching machines; work in automated industries and offices; communicate by means of satellites instantaneously to any part of the solar system; live in homes with walls that provide cooling, heating and lighting; enjoy three-dimensional color stereophonic television and telephone; conduct all financial transactions using coded identification cards; voice opinions on national and local government policies by voting electronically from their homes; enjoy a long and healthful life through computer use which will provide diagnoses with minimum probability of error and will prescribe with maximum probability of cure; ride in quiet fuel cell powered vehicles; and have the contents of even the rarest books available within minutes at the neighborhood information service.
Once emancipated from the materials restraints, we will have developed technologies permitting tailor-making materials starting at the atomic level. Science will dominate several fields of materials which heretofore have been mainly technology. Ceramics engineering, for example, will embody the applications of advances in solid-state physics and chemistry of ceramics. Metallurgy too will continue its present strong science growth until most structural materials are designed by the scientist at his desk.
Single crystals of many exotic metals, alloys and compounds will be mass-produced. Of even more importance to the electronics industry, we will learn to deposit layers of extreme purity single or polycrystalline materials with thicknesses controlled to within a few angstroms. New thresholds of purity will be realized by the use of select enzymes to remove impurities. We shall see the use of ceramic materials as active electronic components and systems formed in integrated circuitry and operable at temperatures up to 2000°K. Insulators and conductors to meet the extremes of atmosphere and temperature for magnetohydrodynamic power generators will be a reality. Further understanding of materials and their s-rfaces will divulge the nature of catalytic phenomena. We will see semiconductors used extensively as catalysts to enhance chemical reactions. This development in the field of catalysis will promote in turn the use of fuel cells to provide power for industrial and home use, relegating to the past the power lines that mar the scenery of our cities and countryside.
Advances in cryogenics will make device operation at 4°K common. These devices, being in many forms, will operate in the superconducting state with infinitesimal power requirements and often with speeds 103 to 104 times those presently common. Cryotrons will evolve beyond the normal switching usage to become integrated logical and memory devices. The present active and passive circuit elements will be duplicated to function at near zero temperatures with attendant realization of drastically reduced noise levels and power requirements orders of magnitudes less than are presently feasible. Superconducting magnets with fields greater than 105 gauss and negligible power dissipation as well as power transformation without loss will be a reality.
During the next decade, and extending forward to the year 2012 A.D., significant advances in the area of thin films and surface phenomena will allow the materials scientist to control the bulk and surface of deposited films. Through this will evolve a new generation of transistor like devices, field emitters, and systems of integrated circuitry with high reliability and of low cost. Deposition techniques will become the dominant method for producing electronic materials as it will allow arbitrary control of the number, kind, concentration and concentration gradient of constituents. It is the nearest approach to working directly with materials in atomic amounts.
This new science of working with atoms might be aptly described as "atom engineering." It will permeate all fields of scientific endeavor and will govern the progress of the electronicist during the next 50 years. This technology will progress to the point where individual atoms, vacancies and defects will be selectively positioned in a device to function as circuit elements. Use of collective electron orbits and spins as memory storage units within a "match-box computer" will be a reality. Atom engineering will provide the solid-state analog of the vacuum tube and will also make possible elaborate tunneling devices and sophisticated systems. The advent of wafer-thin dynamic picture displays is just "around the corner," as is the all purpose ultrasensitive single crystal sensor.
I wish to point out that the specific role played by materials in the advances expected in electronics by 2012 A.D. is subtle, in fact so subtle that some may consider it to be trivial to the progress of electronics. The physics of the material is thought by some to be of singular importance. In such thought it is forgotten that the material possesses the wonderful properties we exploit, not the mathematics which describes these properties. To elucidate further, I point to the example of the p-n junction which triggered the major revolution occurring in electronics. While the elegant mathematics which describes the p-n junction is important, it is the materials technology that permits the formation of the junction which provides the many useful electronic devices we now use. Similarly, it will be our ability to understand and utilize materials, each with its own unique properties, which will be the foundation of electronics in 2012 A.D.
G. K. Teal is Assistant Vice President of Research and Engineering at Texas Instruments, Inc., Dallas, Tex. (Received December 19, 1961.)
===============================================================
Gordon Teal and John Little grew the first germanium and silicon single crystals at Bell Labs. Jack Kilby, inventor of the integrated circuit, called the process that they used to grow the bulk single crystals of germanium and silicon the "Teal Little Process" rather than the Czochralski process as many crystal growers refer to it today.
Wednesday, April 21, 2010
Crystalline Materials Network
This is my first post on my first blog as I shift to all things Google.
I am looking for interested partners in a website that puts the recommendation of the National Academies Research Council into practise for the benefit of New Materials Synthesis and Crystal Growth in the USA. I propose to fund this effort with NSF or TIP resources. Right now this is just a personal effort to follow up on the DGCM (Discovery and Growth of Crystalline Materials) effort of many renowned scientists and engineers who want to see more DGCM.
Google 12640 and NAP (National Academies Press) to find the report that inspired this blog and a similarly named site to be referenced here.
Please respond here or privately as you wish.
d
I am looking for interested partners in a website that puts the recommendation of the National Academies Research Council into practise for the benefit of New Materials Synthesis and Crystal Growth in the USA. I propose to fund this effort with NSF or TIP resources. Right now this is just a personal effort to follow up on the DGCM (Discovery and Growth of Crystalline Materials) effort of many renowned scientists and engineers who want to see more DGCM.
Google 12640 and NAP (National Academies Press) to find the report that inspired this blog and a similarly named site to be referenced here.
Please respond here or privately as you wish.
d
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