The EFRC funding was announced on February 1st, 2010 as cited here and copied below.
http://www.science.doe.gov/bes/EFRC/ANNOUNCEMENTS/DOE_announcements.html#item_100201
FY 2011 funding request released
Feb 1, 2010 :: The FY 2011 funding request for Energy Frontier Research Centers (EFRCs) is $140,000,000, which includes an increase of $40,000,000 over the FY 2010 appropriations. Continued support of $100,000,000 is provided for EFRCs, which were established to integrate the talents and expertise of leading scientists in a setting designed to accelerate research toward meeting our critical energy challenges. The EFRCs harness the most basic and advanced discovery research in a concerted effort to establish the scientific foundation for a fundamentally new U.S. energy economy. Emphasis is being placed on ensuring that the EFRCs are progressing toward their full collaborative and scientific potential. The scientific directions of the EFRCs are overseen by program staff in the Basic Energy Sciences program within the Office of Science to ensure a unified management strategy and structure.
In FY 2011, approximately $40,000,000 will also be available to fund additional EFRCs. New EFRCs will be competitively solicited in two categories: discovery and development of new materials that are critical to both science frontiers and technology innovations, and basic research for energy needs in a limited number of areas that are underrepresented in the original awards.
Discovery and development of new materials. Research in this category will focus on new synthesis capabilities, including bio-inspired approaches, to establish a strong foundation for science-driven materials discovery and synthesis in the U.S. This work will focus on materials broadly and will include crystalline materials, which have been highlighted recently as an essential component of the science grand challenges in the 2007 Basic Energy Sciences Advisory Committee report Directing Matter and Energy: Five Challenges for Science and the Imagination. As described in the November 2009 National Research Council report Frontiers in Crystalline Matter: From Discovery to Technology, the U.S., once the world leader in the discovery and growth of crystalline materials, has fallen behind other nations. Single crystals are vital in understanding the characteristics and properties of new materials, and they also have applications in devices that involve semiconductors, lasers, precision timing devices, solar cells or high temperature operations and provide a natural platform to explore novel states of matter.
Basic research for energy needs. Major areas of emphasis will be in fundamental sciences related to carbon capture and advanced nuclear energy systems. For carbon capture, focused areas include the rational design of novel materials and separation processes for post-combustion CO2 capture, as well as catalysis and separation research for novel carbon capture schemes to aid the design of future power plants. For advanced nuclear energy systems, focused areas include radiation resistant materials in fission and fusion applications and separation science and heavy element chemistry for fuel cycles. The FY 2011 DOE Budget Request also includes approximately $24,000,000 of new research funding to allow for awards to single-investigator and small-group projects in the research areas noted above. Funding Opportunity Announcements more fully describing the opportunities for both types of awards will be issued following the FY 2011 appropriation.
The “Directing Matter…” can be downloaded here:
http://www.sc.doe.gov/bes/reports/files/GC_rpt.pdf
The "Frontiers of Crystalline Matter..." is in the left column of this blog.
Monday, May 10, 2010
Friday, May 7, 2010
Widget for National Academies Press Book #12640
NAP provided the Widget software that was easily installed as a gadget on this blog.
Today I started considering the website characteristics and the system and software. Since we need databases, Google Apps does not appear to be appropriate for the crystallinematerials network requirements. MYSQL has been suggested and is available through Clemson University Information Technology a sandbox that I can play-in to get the database fields defined for both the sample suppliers and sample requesters. I also heard back from Thomas Lagrossa of the AMES Lab Materials Preparation Center. We will link to their website when we get online.
I have registered "crystallinematerials" domains for one year. (biz, ws, us, info, org, com, net).
The OBES in DOE looks like the best opportunity for funding as there may be an Energy Frontier Research Center (EFRC) funding opportunity for crystal growth soon.
Next week will be a good time to get feedback from the NRC Committee by telling them about this blog. I'll also follow up on the events of the National Academies Annual Meeting.
Today I started considering the website characteristics and the system and software. Since we need databases, Google Apps does not appear to be appropriate for the crystallinematerials network requirements. MYSQL has been suggested and is available through Clemson University Information Technology a sandbox that I can play-in to get the database fields defined for both the sample suppliers and sample requesters. I also heard back from Thomas Lagrossa of the AMES Lab Materials Preparation Center. We will link to their website when we get online.
I have registered "crystallinematerials" domains for one year. (biz, ws, us, info, org, com, net).
The OBES in DOE looks like the best opportunity for funding as there may be an Energy Frontier Research Center (EFRC) funding opportunity for crystal growth soon.
Next week will be a good time to get feedback from the NRC Committee by telling them about this blog. I'll also follow up on the events of the National Academies Annual Meeting.
Tuesday, May 4, 2010
Predictions of Gordon K. Teal in 1962
Respecting those who have gone on before and directed our steps, I am posting the predictions of Gordon Kidd Teal in 1962 for his anticipated progress in electronic crystalline materials in 2012 as published in the PROCEEDINGS OF THE IRE, May 1962, pp. 603-604.
The Role of Materials in the Electronics World of 2012 A.D.
GORDON K. TEAL - FELLOW IRE
I contend that the electronics world of 2012 A.D. could come to pass before 1972 if materials technology would permit. We can envisage clearly the contributions of electronics to the lives of our children living in 2012 A.D. They will be highly educated by electronic teaching machines; work in automated industries and offices; communicate by means of satellites instantaneously to any part of the solar system; live in homes with walls that provide cooling, heating and lighting; enjoy three-dimensional color stereophonic television and telephone; conduct all financial transactions using coded identification cards; voice opinions on national and local government policies by voting electronically from their homes; enjoy a long and healthful life through computer use which will provide diagnoses with minimum probability of error and will prescribe with maximum probability of cure; ride in quiet fuel cell powered vehicles; and have the contents of even the rarest books available within minutes at the neighborhood information service.
Once emancipated from the materials restraints, we will have developed technologies permitting tailor-making materials starting at the atomic level. Science will dominate several fields of materials which heretofore have been mainly technology. Ceramics engineering, for example, will embody the applications of advances in solid-state physics and chemistry of ceramics. Metallurgy too will continue its present strong science growth until most structural materials are designed by the scientist at his desk.
Single crystals of many exotic metals, alloys and compounds will be mass-produced. Of even more importance to the electronics industry, we will learn to deposit layers of extreme purity single or polycrystalline materials with thicknesses controlled to within a few angstroms. New thresholds of purity will be realized by the use of select enzymes to remove impurities. We shall see the use of ceramic materials as active electronic components and systems formed in integrated circuitry and operable at temperatures up to 2000°K. Insulators and conductors to meet the extremes of atmosphere and temperature for magnetohydrodynamic power generators will be a reality. Further understanding of materials and their s-rfaces will divulge the nature of catalytic phenomena. We will see semiconductors used extensively as catalysts to enhance chemical reactions. This development in the field of catalysis will promote in turn the use of fuel cells to provide power for industrial and home use, relegating to the past the power lines that mar the scenery of our cities and countryside.
Advances in cryogenics will make device operation at 4°K common. These devices, being in many forms, will operate in the superconducting state with infinitesimal power requirements and often with speeds 103 to 104 times those presently common. Cryotrons will evolve beyond the normal switching usage to become integrated logical and memory devices. The present active and passive circuit elements will be duplicated to function at near zero temperatures with attendant realization of drastically reduced noise levels and power requirements orders of magnitudes less than are presently feasible. Superconducting magnets with fields greater than 105 gauss and negligible power dissipation as well as power transformation without loss will be a reality.
During the next decade, and extending forward to the year 2012 A.D., significant advances in the area of thin films and surface phenomena will allow the materials scientist to control the bulk and surface of deposited films. Through this will evolve a new generation of transistor like devices, field emitters, and systems of integrated circuitry with high reliability and of low cost. Deposition techniques will become the dominant method for producing electronic materials as it will allow arbitrary control of the number, kind, concentration and concentration gradient of constituents. It is the nearest approach to working directly with materials in atomic amounts.
This new science of working with atoms might be aptly described as "atom engineering." It will permeate all fields of scientific endeavor and will govern the progress of the electronicist during the next 50 years. This technology will progress to the point where individual atoms, vacancies and defects will be selectively positioned in a device to function as circuit elements. Use of collective electron orbits and spins as memory storage units within a "match-box computer" will be a reality. Atom engineering will provide the solid-state analog of the vacuum tube and will also make possible elaborate tunneling devices and sophisticated systems. The advent of wafer-thin dynamic picture displays is just "around the corner," as is the all purpose ultrasensitive single crystal sensor.
I wish to point out that the specific role played by materials in the advances expected in electronics by 2012 A.D. is subtle, in fact so subtle that some may consider it to be trivial to the progress of electronics. The physics of the material is thought by some to be of singular importance. In such thought it is forgotten that the material possesses the wonderful properties we exploit, not the mathematics which describes these properties. To elucidate further, I point to the example of the p-n junction which triggered the major revolution occurring in electronics. While the elegant mathematics which describes the p-n junction is important, it is the materials technology that permits the formation of the junction which provides the many useful electronic devices we now use. Similarly, it will be our ability to understand and utilize materials, each with its own unique properties, which will be the foundation of electronics in 2012 A.D.
G. K. Teal is Assistant Vice President of Research and Engineering at Texas Instruments, Inc., Dallas, Tex. (Received December 19, 1961.)
===============================================================
Gordon Teal and John Little grew the first germanium and silicon single crystals at Bell Labs. Jack Kilby, inventor of the integrated circuit, called the process that they used to grow the bulk single crystals of germanium and silicon the "Teal Little Process" rather than the Czochralski process as many crystal growers refer to it today.
The Role of Materials in the Electronics World of 2012 A.D.
GORDON K. TEAL - FELLOW IRE
I contend that the electronics world of 2012 A.D. could come to pass before 1972 if materials technology would permit. We can envisage clearly the contributions of electronics to the lives of our children living in 2012 A.D. They will be highly educated by electronic teaching machines; work in automated industries and offices; communicate by means of satellites instantaneously to any part of the solar system; live in homes with walls that provide cooling, heating and lighting; enjoy three-dimensional color stereophonic television and telephone; conduct all financial transactions using coded identification cards; voice opinions on national and local government policies by voting electronically from their homes; enjoy a long and healthful life through computer use which will provide diagnoses with minimum probability of error and will prescribe with maximum probability of cure; ride in quiet fuel cell powered vehicles; and have the contents of even the rarest books available within minutes at the neighborhood information service.
Once emancipated from the materials restraints, we will have developed technologies permitting tailor-making materials starting at the atomic level. Science will dominate several fields of materials which heretofore have been mainly technology. Ceramics engineering, for example, will embody the applications of advances in solid-state physics and chemistry of ceramics. Metallurgy too will continue its present strong science growth until most structural materials are designed by the scientist at his desk.
Single crystals of many exotic metals, alloys and compounds will be mass-produced. Of even more importance to the electronics industry, we will learn to deposit layers of extreme purity single or polycrystalline materials with thicknesses controlled to within a few angstroms. New thresholds of purity will be realized by the use of select enzymes to remove impurities. We shall see the use of ceramic materials as active electronic components and systems formed in integrated circuitry and operable at temperatures up to 2000°K. Insulators and conductors to meet the extremes of atmosphere and temperature for magnetohydrodynamic power generators will be a reality. Further understanding of materials and their s-rfaces will divulge the nature of catalytic phenomena. We will see semiconductors used extensively as catalysts to enhance chemical reactions. This development in the field of catalysis will promote in turn the use of fuel cells to provide power for industrial and home use, relegating to the past the power lines that mar the scenery of our cities and countryside.
Advances in cryogenics will make device operation at 4°K common. These devices, being in many forms, will operate in the superconducting state with infinitesimal power requirements and often with speeds 103 to 104 times those presently common. Cryotrons will evolve beyond the normal switching usage to become integrated logical and memory devices. The present active and passive circuit elements will be duplicated to function at near zero temperatures with attendant realization of drastically reduced noise levels and power requirements orders of magnitudes less than are presently feasible. Superconducting magnets with fields greater than 105 gauss and negligible power dissipation as well as power transformation without loss will be a reality.
During the next decade, and extending forward to the year 2012 A.D., significant advances in the area of thin films and surface phenomena will allow the materials scientist to control the bulk and surface of deposited films. Through this will evolve a new generation of transistor like devices, field emitters, and systems of integrated circuitry with high reliability and of low cost. Deposition techniques will become the dominant method for producing electronic materials as it will allow arbitrary control of the number, kind, concentration and concentration gradient of constituents. It is the nearest approach to working directly with materials in atomic amounts.
This new science of working with atoms might be aptly described as "atom engineering." It will permeate all fields of scientific endeavor and will govern the progress of the electronicist during the next 50 years. This technology will progress to the point where individual atoms, vacancies and defects will be selectively positioned in a device to function as circuit elements. Use of collective electron orbits and spins as memory storage units within a "match-box computer" will be a reality. Atom engineering will provide the solid-state analog of the vacuum tube and will also make possible elaborate tunneling devices and sophisticated systems. The advent of wafer-thin dynamic picture displays is just "around the corner," as is the all purpose ultrasensitive single crystal sensor.
I wish to point out that the specific role played by materials in the advances expected in electronics by 2012 A.D. is subtle, in fact so subtle that some may consider it to be trivial to the progress of electronics. The physics of the material is thought by some to be of singular importance. In such thought it is forgotten that the material possesses the wonderful properties we exploit, not the mathematics which describes these properties. To elucidate further, I point to the example of the p-n junction which triggered the major revolution occurring in electronics. While the elegant mathematics which describes the p-n junction is important, it is the materials technology that permits the formation of the junction which provides the many useful electronic devices we now use. Similarly, it will be our ability to understand and utilize materials, each with its own unique properties, which will be the foundation of electronics in 2012 A.D.
G. K. Teal is Assistant Vice President of Research and Engineering at Texas Instruments, Inc., Dallas, Tex. (Received December 19, 1961.)
===============================================================
Gordon Teal and John Little grew the first germanium and silicon single crystals at Bell Labs. Jack Kilby, inventor of the integrated circuit, called the process that they used to grow the bulk single crystals of germanium and silicon the "Teal Little Process" rather than the Czochralski process as many crystal growers refer to it today.
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